Vertical transport in type-II Heterojunctions with InAs/GaSb/AlSb composite quantum wells in a high magnetic field

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F17%3A00479789" target="_blank" >RIV/68378271:_____/17:00479789 - isvavai.cz</a>

Result on the web

<a href="http://dx.doi.org/10.1134/S1063782617100141" target="_blank" >http://dx.doi.org/10.1134/S1063782617100141</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1134/S1063782617100141" target="_blank" >10.1134/S1063782617100141</a>

Result language

angličtina

Original language name

Vertical transport in type-II Heterojunctions with InAs/GaSb/AlSb composite quantum wells in a high magnetic field

Original language description

Vertical transport in type-II heterojunctions with a two-barrier AlSb/InAs/GaSb/AlSb quantum well grown by MOVPE on an n-InAs substrate is investigated. Shubnikov–de Haas oscillations are measured at two orientations of the magnetic field (perpendicular and parallel) relative to the structure plane. It is established that conduction in the structure under study is occurs via both three-dimensional substrate electrons and two-dimensional QW electrons under quantum limit conditions for bulk electrons (B > 5 T). The electron concentrations in the substrate and InAs QW are determined. The g-factor for 3D carriers is determined by spin splitting of the zero Landau level. It is shown that the conductance maxima in a magnetic field perpendicular to the structure plane and parallel to the current across the structure in fields B > 9 T correspond to the resonant tunneling of 3D electrons from the emitter substrate into the InAs QW through the 2D electron states of the Landau levels.

Czech name

—

Czech description

—

Type

J_imp - Article in a specialist periodical, which is included in the Web of Science database

CEP classification

—

OECD FORD branch

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Project

Result was created during the realization of more than one project. More information in the Projects tab.

Continuities

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year

2017

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Semiconductors

ISSN

1063-7826

e-ISSN

—

Volume of the periodical

51

Issue of the periodical within the volume

10

Country of publishing house

RU - RUSSIAN FEDERATION

Number of pages

7

Pages from-to

1343-1349

UT code for WoS article

000412461400012

EID of the result in the Scopus database

—