Design of InGaN/GaN MQW structure for scintillator applications

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F18%3A00496205" target="_blank" >RIV/68378271:_____/18:00496205 - isvavai.cz</a>

Result on the web

—

DOI - Digital Object Identifier

—

Result language

angličtina

Original language name

Design of InGaN/GaN MQW structure for scintillator applications

Original language description

Nitride semiconductor heterostructures are widely used for light emitting and laser diodes as well as for high power and high frequency applications. Recently, new application for InGaN/GaN multiple quantum well (MQW) heterostructures has emerged. It was shown that these heterostructures, if properly designed, can work as very efficient fast scintillators with long lifetime due to their radiation resistance. Although this application does not have such a massive market as LEDs, LDs or HEMTs, there is still very strong demand for fast scintillators and detectors of ionizing radiation due to the expansion of new diagnostic methods in medicine, electron microscopy and nuclear physics.

Czech name

—

Czech description

—

Type

O - Miscellaneous

CEP classification

—

OECD FORD branch

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Project

<a href="/en/project/GA16-11769S" target="_blank" >GA16-11769S: Nitride heterostructures for fast detection of ionizing radiation</a><br>

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year

2018

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů