Diamond nucleation and growth on horizontally and vertically aligned Si substrates at low pressure in a linear antenna microwave plasma system

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F18%3A00499576" target="_blank" >RIV/68378271:_____/18:00499576 - isvavai.cz</a>
Alternative codes found
RIV/68407700:21110/18:00316614
Result on the web
<a href="http://dx.doi.org/10.1016/j.diamond.2017.12.018" target="_blank" >http://dx.doi.org/10.1016/j.diamond.2017.12.018</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.diamond.2017.12.018" target="_blank" >10.1016/j.diamond.2017.12.018</a>

Result language
angličtina
Original language name
Diamond nucleation and growth on horizontally and vertically aligned Si substrates at low pressure in a linear antenna microwave plasma system
Original language description
The spontaneous nucleation and early stages of diamond growth in a linear antenna microwave plasma reactor on horizontally (HorS) and vertically (VerS) aligned non-treated and seeded silicon substrates are studied for different deposition durations (5 and 10 h) and gas mixtures. The scanning electron microscope and atomic force microscope images reveal variation in the topographical properties of samples depending on the sample alignment and z-position on VerS.
Czech name
—
Czech description
—

Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
—
OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Project
<a href="/en/project/GBP108%2F12%2FG108" target="_blank" >GBP108/12/G108: Preparation, modification and characterization of materials by radiation</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2018
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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