Shunt quenching and concept of independent global shunt in multijunction solar cells
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F18%3A00500477" target="_blank" >RIV/68378271:_____/18:00500477 - isvavai.cz</a>
Alternative codes found
RIV/68407700:21230/18:00322744
Result on the web
<a href="http://dx.doi.org/10.1109/JPHOTOV.2018.2828850" target="_blank" >http://dx.doi.org/10.1109/JPHOTOV.2018.2828850</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1109/JPHOTOV.2018.2828850" target="_blank" >10.1109/JPHOTOV.2018.2828850</a>
Alternative languages
Result language
angličtina
Original language name
Shunt quenching and concept of independent global shunt in multijunction solar cells
Original language description
We show that two-terminal multi-junction cells interconnected by tunnel junctions are fairly immune to individual local shunts thanks to the shunt quenching. Interestingly, they may still suffer from global shunts. We revise the paradigm of a multi-junction cell as a simple serial connection of component cells. This paradigm remains valid only for multi-junction cells with laterally conductive interlayers. Instead, a new equivalent circuit is proposed and verified by measurement and simulations. As a main approach, selective illumination is applied and the voltage is measured at the end terminals. The global shunt is seen as a shift from logarithmic to linear intensity response. The presence of tunnel junction is important for an optimum configuration of tandem structures such as metal-halide perovskite with crystalline silicon solar cell.
Czech name
—
Czech description
—
Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
—
OECD FORD branch
20201 - Electrical and electronic engineering
Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2018
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
IEEE Journal of Photovoltaics
ISSN
2156-3381
e-ISSN
—
Volume of the periodical
8
Issue of the periodical within the volume
4
Country of publishing house
US - UNITED STATES
Number of pages
6
Pages from-to
1005-1010
UT code for WoS article
000436007400014
EID of the result in the Scopus database
2-s2.0-85048008574