Atomic-scale defects and electronic properties of a transferred synthesized MoS2 monolayer

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F18%3A00500993" target="_blank" >RIV/68378271:_____/18:00500993 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1088/1361-6528/aac27d" target="_blank" >http://dx.doi.org/10.1088/1361-6528/aac27d</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1088/1361-6528/aac27d" target="_blank" >10.1088/1361-6528/aac27d</a>

Result language
angličtina
Original language name
Atomic-scale defects and electronic properties of a transferred synthesized MoS2 monolayer
Original language description
MoS2 monolayer samples were synthesized on a SiO2/Si wafer and transferred to Ir(111) for nano-scale characterization. The samples were extensively characterized during every step of the transfer process, and MoS2 on the final substrate was examined down to the atomic level by scanning tunneling microscopy (STM). Subsequent transfer to the Ir(111) surface led to a strong drop of this optical signal but without further shifts of characteristic peaks. The electronic band gap was measured by scanning tunneling spectroscopy (STS), revealing n-doping and lateral nano-scale variations. The combined use of STM imaging and density functional theory (DFT) calculations allows us to identify the most recurring point-like defects as S vacancies.n
Czech name
—
Czech description
—

Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
—
OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Project
—
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2018
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Similar results(10)