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Electrical and optical properties of scandium nitride nanolayers on MgO (100) substrate

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F19%3A00509472" target="_blank" >RIV/68378271:_____/19:00509472 - isvavai.cz</a>

  • Result on the web

    <a href="http://hdl.handle.net/11104/0300219" target="_blank" >http://hdl.handle.net/11104/0300219</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1063/1.5056245" target="_blank" >10.1063/1.5056245</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    Electrical and optical properties of scandium nitride nanolayers on MgO (100) substrate

  • Original language description

    Scandium nitride (ScN) is a rocksalt-structure semiconductor that has attracted attention for its potential applications in thermoelectric energy conversion devices, as a semiconducting component in epitaxial metal/semiconductor superlattices. ScN nanolayers of 30 nm thickness were deposited on MgO (001) substrate by reactive sputtering. Epitaxial growth of ScN(002) was observed with a mosaicity between grains around the {002} growth axis. Both direct band gaps theoretically predicted were measured at 2.59 eV and 4.25 eV for the energy gaps between the valence band and the conductance band at the X point and the Gamma point respectively.

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database

  • CEP classification

  • OECD FORD branch

    10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Result continuities

  • Project

    Result was created during the realization of more than one project. More information in the Projects tab.

  • Continuities

    P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Others

  • Publication year

    2019

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    AIP Advances

  • ISSN

    2158-3226

  • e-ISSN

  • Volume of the periodical

    9

  • Issue of the periodical within the volume

    1

  • Country of publishing house

    US - UNITED STATES

  • Number of pages

    7

  • Pages from-to

    1-7

  • UT code for WoS article

    000457407600112

  • EID of the result in the Scopus database

    2-s2.0-85060141226