Electrical and optical properties of scandium nitride nanolayers on MgO (100) substrate
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F19%3A00509472" target="_blank" >RIV/68378271:_____/19:00509472 - isvavai.cz</a>
Result on the web
<a href="http://hdl.handle.net/11104/0300219" target="_blank" >http://hdl.handle.net/11104/0300219</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1063/1.5056245" target="_blank" >10.1063/1.5056245</a>
Alternative languages
Result language
angličtina
Original language name
Electrical and optical properties of scandium nitride nanolayers on MgO (100) substrate
Original language description
Scandium nitride (ScN) is a rocksalt-structure semiconductor that has attracted attention for its potential applications in thermoelectric energy conversion devices, as a semiconducting component in epitaxial metal/semiconductor superlattices. ScN nanolayers of 30 nm thickness were deposited on MgO (001) substrate by reactive sputtering. Epitaxial growth of ScN(002) was observed with a mosaicity between grains around the {002} growth axis. Both direct band gaps theoretically predicted were measured at 2.59 eV and 4.25 eV for the energy gaps between the valence band and the conductance band at the X point and the Gamma point respectively.
Czech name
—
Czech description
—
Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
—
OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)
Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2019
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
AIP Advances
ISSN
2158-3226
e-ISSN
—
Volume of the periodical
9
Issue of the periodical within the volume
1
Country of publishing house
US - UNITED STATES
Number of pages
7
Pages from-to
1-7
UT code for WoS article
000457407600112
EID of the result in the Scopus database
2-s2.0-85060141226