Effect of hydrogen chloride etching on carrier recombination processes of indium phosphide nanowires

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F19%3A00511161" target="_blank" >RIV/68378271:_____/19:00511161 - isvavai.cz</a>
Result on the web
<a href="http://hdl.handle.net/11104/0301494" target="_blank" >http://hdl.handle.net/11104/0301494</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1039/c9nr03187a" target="_blank" >10.1039/c9nr03187a</a>

Result language
angličtina
Original language name
Effect of hydrogen chloride etching on carrier recombination processes of indium phosphide nanowires
Original language description
Introduction of in situ HCl etching to an epitaxial growth process has been shown to suppress radial growth and improve the morphology and optical properties of nanowires. We investigate the dynamics of photogenerated charge carriers in a series of InP nanowires grown with varied HCl fluxes. A variety of time resolved methods was combined to investigate charge trapping and recombination processes in the nanowires. We found that the photoluminescence decay is dominated by the decay of the mobile hole population due to trapping, which is affected by the HCl etching. The hole trapping rate is in general faster at the top of the nanowires than at the bottom. In contrast, electrons remain highly mobile until they recombine nonradiatively with the trapped holes. The slowest hole trapping as well as the least efficient non-radiative recombination was recorded for etching using the HCl molar fraction of χHCl = 5.4e−5.n
Czech name
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Czech description
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Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2019
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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