Defects creation in the undoped Gd3(Ga,Al)5O12 single crystals and Ce3+ doped Gd3(Ga,Al)5O12 single crystals and epitaxial films under irradiation in the Gd3+ related absorption bands

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F19%3A00520187" target="_blank" >RIV/68378271:_____/19:00520187 - isvavai.cz</a>

Alternative codes found

RIV/00216208:11320/19:10399562

Result on the web

<a href="https://doi.org/10.1016/j.optmat.2018.12.033" target="_blank" >https://doi.org/10.1016/j.optmat.2018.12.033</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.optmat.2018.12.033" target="_blank" >10.1016/j.optmat.2018.12.033</a>

Result language

angličtina

Original language name

Defects creation in the undoped Gd3(Ga,Al)5O12 single crystals and Ce3+ doped Gd3(Ga,Al)5O12 single crystals and epitaxial films under irradiation in the Gd3+ related absorption bands

Original language description

For the first time, an effective photostimulated creation of defects is observed under selective irradiation of the undoped Gd3Ga3Al2O12 single crystal and the Ce - doped Gd3(Ga,Al)5O12 single crystal and epitaxial film in the Gd3+ - related 8 S7/2 → 6 IJ and 8 S7/2 → 6 PJ absorption bands. Defects creation processes are investigated by the thermally stimulated luminescence (TSL) method in the 4.2–500 K temperature range. The dependences of the TSL glow curve peak intensity on the irradiation photon energy, irradiation temperature, and irradiation duration are measured and analyzed. The activation energy of the TSL glow curve peaks creation is found to be about 0.02 eV. Possible mechanisms of defects creation under irradiation in the absorption bands of Gd3+ in Gd3Ga3Al2O12 and Gd3(Ga,Al)5O12:Ce are discussed.

Czech name

—

Czech description

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Type

J_imp - Article in a specialist periodical, which is included in the Web of Science database

CEP classification

—

OECD FORD branch

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Project

<a href="/en/project/GA16-15569S" target="_blank" >GA16-15569S: Fast thin film scintillators for high resolution 2D-imaging</a><br>

Continuities

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year

2019

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Optical Materials

ISSN

0925-3467

e-ISSN

—

Volume of the periodical

88

Issue of the periodical within the volume

Feb

Country of publishing house

NL - THE KINGDOM OF THE NETHERLANDS

Number of pages

5

Pages from-to

601-605

UT code for WoS article

000461001600084

EID of the result in the Scopus database

2-s2.0-85059158268