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Transient dielectric functions of Ge, Si, and InP from femtosecond pump-probe ellipsometry

Result description

Transient dielectric functions with a 120 fs time resolution of Ge, Si, and InP were acquired from 1.7 to 3.5eV with a femtosecond pump-probe rotating-compensator ellipsometer. The intensity of the pump laser (with 1.55, 3.10, or 4.65eV photon energy) was adjusted to create an initial near-surface carrier density of 10(20)cm(-3). In Ge, there is a significant (similar to 15%) decrease in the E-1 and E-1+Delta(1) critical point absorption and a Kramers-Kronig consistent change in the refractive index because photoexcited electrons at L block these transitions and reduce their amplitudes. Only a small redshift of the E-1 critical point is observed, which we attribute to lattice heating and exchange-correlation effects. Minimal changes were found for Si and InP, where electrons near Delta and Gamma do not participate in interband transitions between 1.7 and 3.5eV.

Keywords

deformation potentialstemperature-dependencecritical-pointsGaAs

The result's identifiers

Alternative languages

  • Result language

    angličtina

  • Original language name

    Transient dielectric functions of Ge, Si, and InP from femtosecond pump-probe ellipsometry

  • Original language description

    Transient dielectric functions with a 120 fs time resolution of Ge, Si, and InP were acquired from 1.7 to 3.5eV with a femtosecond pump-probe rotating-compensator ellipsometer. The intensity of the pump laser (with 1.55, 3.10, or 4.65eV photon energy) was adjusted to create an initial near-surface carrier density of 10(20)cm(-3). In Ge, there is a significant (similar to 15%) decrease in the E-1 and E-1+Delta(1) critical point absorption and a Kramers-Kronig consistent change in the refractive index because photoexcited electrons at L block these transitions and reduce their amplitudes. Only a small redshift of the E-1 critical point is observed, which we attribute to lattice heating and exchange-correlation effects. Minimal changes were found for Si and InP, where electrons near Delta and Gamma do not participate in interband transitions between 1.7 and 3.5eV.

  • Czech name

    —

  • Czech description

    —

Classification

  • Type

    Jimp - Article in a specialist periodical, which is included in the Web of Science database

  • CEP classification

    —

  • OECD FORD branch

    10305 - Fluids and plasma physics (including surface physics)

Result continuities

Others

  • Publication year

    2019

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    Applied Physics Letters

  • ISSN

    0003-6951

  • e-ISSN

    —

  • Volume of the periodical

    115

  • Issue of the periodical within the volume

    5

  • Country of publishing house

    US - UNITED STATES

  • Number of pages

    4

  • Pages from-to

    1-4

  • UT code for WoS article

    000478913700025

  • EID of the result in the Scopus database

    2-s2.0-85073886140

Result type

Jimp - Article in a specialist periodical, which is included in the Web of Science database

Jimp

OECD FORD

Fluids and plasma physics (including surface physics)

Year of implementation

2019

Similar results(10)

Coherent acoustic phonon oscillations and transient critical point parameters of Ge from femtosecond pump–probe ellipsometryThe Role of Crystallization Parameters for the Synthesis of Germanosilicate with UTL TopologyDifferent universality classes of isostructural UTX compounds (T = Rh, Co, Co-0.Ru-98(0.02); X = Ga, Al)