Antenna-like effect induced by surface defects upon ultrashort laser nanostructuring of silicon

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F19%3A00522398" target="_blank" >RIV/68378271:_____/19:00522398 - isvavai.cz</a>
Alternative codes found
RIV/00216208:11320/19:10404333
Result on the web
<a href="http://hdl.handle.net/11104/0306897" target="_blank" >http://hdl.handle.net/11104/0306897</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.17973/MMSJ.2019_12_2019105" target="_blank" >10.17973/MMSJ.2019_12_2019105</a>

Result language
angličtina
Original language name
Antenna-like effect induced by surface defects upon ultrashort laser nanostructuring of silicon
Original language description
Silicon is one of the most used materials in nanostructure research and in a wide range of high-technological applications spanning from the fine chemical industry to medicine and to semiconductor electronics. The processes underlying laser-induced nanostructuring of Si surfaces are still not fully understood. In particular, it is not completely clear how individual surface defects contribute to generation of ordered structures. In this contribution, we report on the influence of random defects, which are present on silicon surfaces, on the formation of periodic surface structures by laser irradiation with femto- and picosecond pulses. A thorough analysis of the results leads to the conclusion that the surface defects act as antenna-like elements directing radiation along the sample surface and determining the location, directionality and quality of structuring.
Czech name
—
Czech description
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Type
J<sub>SC</sub> - Article in a specialist periodical, which is included in the SCOPUS database
CEP classification
—
OECD FORD branch
10306 - Optics (including laser optics and quantum optics)

Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2019
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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