Shadow epitaxy for in situ growth of generic semiconductor/superconductor hybrids

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F20%3A00533536" target="_blank" >RIV/68378271:_____/20:00533536 - isvavai.cz</a>
Result on the web
<a href="https://doi.org/10.1002/adma.201908411" target="_blank" >https://doi.org/10.1002/adma.201908411</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1002/adma.201908411" target="_blank" >10.1002/adma.201908411</a>

Result language
angličtina
Original language name
Shadow epitaxy for in situ growth of generic semiconductor/superconductor hybrids
Original language description
Uniform, defect‐free crystal interfaces and surfaces are crucial ingredients for realizing high‐performance nanoscale devices. A pertinent example is that advances in gate‐tunable and topological superconductivity using semiconductor/superconductor electronic devices are currently built on the hard proximity‐induced superconducting gap obtained from epitaxial indium arsenide/aluminum heterostructures. Fabrication of devices requires selective etch processes, these exist only for InAs/Al hybrids, precluding the use of other, potentially superior material combinations.
Czech name
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Czech description
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Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
21001 - Nano-materials (production and properties)

Project
—
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2020
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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