Dielectric and conducting properties of unintentionally and Sn-doped beta-Ga2O3 studied by terahertz spectroscopy

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F20%3A00538408" target="_blank" >RIV/68378271:_____/20:00538408 - isvavai.cz</a>

Result on the web

<a href="https://doi.org/10.1063/1.5143735" target="_blank" >https://doi.org/10.1063/1.5143735</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1063/1.5143735" target="_blank" >10.1063/1.5143735</a>

Result language

angličtina

Original language name

Dielectric and conducting properties of unintentionally and Sn-doped beta-Ga2O3 studied by terahertz spectroscopy

Original language description

Dielectric and conducting properties of unintentionally doped bulk and Sn-doped thin film β-Ga2O3 samples were studied using time- domain terahertz spectroscopy. The low-temperature spectra of the unintentionally doped sample were fit using a model involving two oscillators. The parameters of one of them show an unusual temperature dependence, in particular, a pronounced increase in the oscillator strength upon heating above 50 K. This is interpreted as an absorption due to thermally activated charge carriers moving in localized potential minima linked to the unintentional doping. Upon heating, the influence of this optical conductivity mechanism strongly increases, and the sample becomes opaque in the THz range near 100 K. The nanocrystalline Sn-doped Ga2 O3 thin film sample exhibits a much higher optical conductivity than the unintentionally doped bulk sample, and its spectra are remarkably stable over a broad temperature range (4–750 K).n

Czech name

—

Czech description

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Type

J_imp - Article in a specialist periodical, which is included in the Web of Science database

CEP classification

—

OECD FORD branch

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Project

Result was created during the realization of more than one project. More information in the Projects tab.

Continuities

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year

2020

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Journal of Applied Physics

ISSN

0021-8979

e-ISSN

—

Volume of the periodical

127

Issue of the periodical within the volume

16

Country of publishing house

US - UNITED STATES

Number of pages

8

Pages from-to

1-8

UT code for WoS article

000531818600004

EID of the result in the Scopus database

2-s2.0-85092059928