Integration of nanometer-thick 1T-TaS2 films with silicon for an optically driven wide-band terahertz modulator
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F20%3A00539196" target="_blank" >RIV/68378271:_____/20:00539196 - isvavai.cz</a>
Result on the web
<a href="https://doi.org/10.1021/acsanm.0c02076" target="_blank" >https://doi.org/10.1021/acsanm.0c02076</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1021/acsanm.0c02076" target="_blank" >10.1021/acsanm.0c02076</a>
Alternative languages
Result language
angličtina
Original language name
Integration of nanometer-thick 1T-TaS2 films with silicon for an optically driven wide-band terahertz modulator
Original language description
The amplitude of terahertz (THz) waves is modulated optically by a pumping laser source, and the effect of optical power on modulation depth is systematically investigated in this work. The reported THz modulator is based on a conducting transition metal dichalcogenide (TMD), that is, a nanometer-thick thin film of tantalum disulfide (TaS2) grown on a high-resistivity silicon (Si) substrate. The Raman spectrum confirms the formation of the 1T phase of TaS2. Modulation depths of 69.3 and 46.8% have been achieved at 0.1 THz and 0.9 THz frequency, respectively, under a low pumping power of 1 W/cm2. A constant higher modulation depth in the wide frequency range reveals the broadband response of the THz modulator. Under the same conditions, the modulation increased twice as compared to bare Si after annealing at 300 °C in the presence of air. Furthermore, numerical analysis based on the finite-difference time domain shows that a greater number of photogenerated charge carriers are present near the interface of Si and TaS2, which leads to enhancement in modulation. The utilization of 1T-TaS2 imparts potential to these TMDs in the wide THz frequency range and unfolds the possibilities for their use in THz imaging, wireless communication, and detection processes.n
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)
Result continuities
Project
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Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2020
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
ACS APPLIED NANO MATERIALS
ISSN
2574-0970
e-ISSN
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Volume of the periodical
3
Issue of the periodical within the volume
11
Country of publishing house
US - UNITED STATES
Number of pages
10
Pages from-to
10767-10777
UT code for WoS article
000595546500024
EID of the result in the Scopus database
2-s2.0-85096133075