Crystal growth and optical properties of Ce-doped (La,Y)2Si2O7 single crystal

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F21%3A00545158" target="_blank" >RIV/68378271:_____/21:00545158 - isvavai.cz</a>
Result on the web
<a href="http://hdl.handle.net/11104/0321949" target="_blank" >http://hdl.handle.net/11104/0321949</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.jcrysgro.2021.126252" target="_blank" >10.1016/j.jcrysgro.2021.126252</a>

Result language
angličtina
Original language name
Crystal growth and optical properties of Ce-doped (La,Y)2Si2O7 single crystal
Original language description
We have grown Ce-doped (La,Y)2Si2O7 single crystal by micro-pulling-down method. The observed thermal quenching process could be characterized by the quenching temperature (T50%) of 526 K and its activation energy was determined to be 0.62 eV. It was found that the thermal quenching was caused by at least the thermal ionization and maybe also by classical thermal quenching. The light output and scintillation decay time were evaluated to be ~12,000 photons/MeV and ~42 ns, respectively.
Czech name
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Czech description
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Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2021
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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