Ga vacancies in MOVPE prepared GaN layers - correlation with other point defects

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F22%3A00567935" target="_blank" >RIV/68378271:_____/22:00567935 - isvavai.cz</a>

Result on the web

<a href="https://event.mostwiedzy.pl/event/2/attachments/52/145/PCCG_Abstract_book_updated.pdf" target="_blank" >https://event.mostwiedzy.pl/event/2/attachments/52/145/PCCG_Abstract_book_updated.pdf</a>

DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Ga vacancies in MOVPE prepared GaN layers - correlation with other point defects

Original language description

Defects related to gallium vacancies (VGa) were studied in a set of GaN samples prepared by MOVPE under different technological conditions by Variable energy positron annihilation spectroscopy VEPAS. Different correlations between layers grown from TMGa and TEGa were observed. Increased VGa concentration enhances excitonic luminescence, probably VGa prevents formation of some other highly efficient nonradiative defect. Anticorrelation between VGa formation and carbon contamination was also observed.

Czech name

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Czech description

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Type

O - Miscellaneous

CEP classification

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OECD FORD branch

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Project

<a href="/en/project/EF16_019%2F0000760" target="_blank" >EF16_019/0000760: Solid State Physics for 21st century</a><br>

Continuities

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year

2022

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů