Self-oriented MoS2 nanosheets on microcrystalline diamond layers: controlled synthesis and optoelectronic effects
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F25%3A00617144" target="_blank" >RIV/68378271:_____/25:00617144 - isvavai.cz</a>
Alternative codes found
RIV/68407700:21230/25:00379947
Result on the web
<a href="https://hdl.handle.net/11104/0364102" target="_blank" >https://hdl.handle.net/11104/0364102</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1021/acsaelm.4c01704" target="_blank" >10.1021/acsaelm.4c01704</a>
Alternative languages
Result language
angličtina
Original language name
Self-oriented MoS2 nanosheets on microcrystalline diamond layers: controlled synthesis and optoelectronic effects
Original language description
Combining diamond and two-dimensional materials is attracting increasing attention for synergic effects that have the best of both worlds. Applications range from electronics and quantum technologies to catalysis, energy conversion, and biosensors. Here, heterostructures based on hydrogenated diamond microcrystalline thin films with attached MoS2 nanosheets are formed by a single-zone annealing at atmospheric pressure. By varying the process parameters, MoS2 sheets are controllably synthesized in a vertical or horizontal orientation with respect to the diamond grain facets, which leads to a pronounced impact on the electronic and optoelectronic properties of the heterostructures. Raman, SEM, AFM, KPFM, and SKP analyses show the influence of the MoS2 orientation and thickness on the work function, surface potential, spatially and spectrally resolved photovoltage, and charge transfer kinetics. The aligned growth of MoS2 nanosheets and their properties are elucidated by molecular mechanics and time-dependent DFT calculations, which explain the mechanism of the assembly and the related optoelectronic effects in a straightforward way. The major switching point occurs precisely at 11 nm of the MoS2 thickness/length. The highest photoresponse of 350 meV and favorable charge transfer are observed for the vertical MoS2 arrangement on diamond, yet without a covalent bond. The results and theoretical model hint at broader implications beyond the MoS2-diamond system.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)
Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2025
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
ACS Applied Electronic Materials
ISSN
2637-6113
e-ISSN
2637-6113
Volume of the periodical
7
Issue of the periodical within the volume
3
Country of publishing house
US - UNITED STATES
Number of pages
15
Pages from-to
1004-1018
UT code for WoS article
001403509400001
EID of the result in the Scopus database
2-s2.0-85216403557