Improvement of morphology and electrical properties of boron-doped diamond films via seeding with HPHT nanodiamonds synthesized from 9-borabicyclononane

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F25%3A00618598" target="_blank" >RIV/68378271:_____/25:00618598 - isvavai.cz</a>

Alternative codes found

RIV/49777513:23640/25:43977789

Result on the web

<a href="https://doi.org/10.1016/j.diamond.2025.112127" target="_blank" >https://doi.org/10.1016/j.diamond.2025.112127</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.diamond.2025.112127" target="_blank" >10.1016/j.diamond.2025.112127</a>

Result language

angličtina

Original language name

Improvement of morphology and electrical properties of boron-doped diamond films via seeding with HPHT nanodiamonds synthesized from 9-borabicyclononane

Original language description

Boron-doped diamond (BDD) films are becoming increasingly popular as electrode materials due to their broad potential window and stability in harsh conditions and environments. Therefore, optimizing the crystal quality and minimizing defect density to maximize electronic properties (e.g. conductivity) of BDD is of great importance. This study investigates the influence of different hydrogenated nanodiamond (H-ND) seeding layers on the growth and properties of BDD films. Three types of seeding H-NDs were examined: detonation (H-DND) and topdown high-pressure high-temperature NDs (TD_HPHT H-ND), and boron-doped NDs (H-BND) newly synthesized at high-pressure high-temperature from an organic precursor. Purified and oxidized BND (O-BND) samples yielded clear, blue, and stable colloidal dispersions. Subsequent thermal hydrogenation reversed their zeta potential from – 32 mV to +44 mV and promoted the seeding of negatively charged surfaces. All three H-ND types formed dense seeding layers on SiO2 and Si/SiOx substrates, which enabled the growth of BDD films by chemical vapor deposition (CVD). Despite variations in initial surface coverage among the seeding layers (13–25 %), all NDs facilitated the growth of fully closed BDD films approximately 1 μm thick. Significant differences in film morphology and electrical properties were observed. H-BND nucleation yielded the BDD films with the largest crystals (up to 1000 nm) and lowest sheet resistance (400 Ω/sq). This superior performance is attributed to the uniform particle shape and monocrystalline character of H-BND, as corroborated by FTIR, TEM, and SAXS measurements. These findings highlight the critical role of seeding layer properties in determining consequent diamond film evolution and establish H-BNDs as promising seeding material for the growth of high-quality BDD films suitable for electronic and electrochemical applications.

Czech name

—

Czech description

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Type

J_imp - Article in a specialist periodical, which is included in the Web of Science database

CEP classification

—

OECD FORD branch

21001 - Nano-materials (production and properties)

Project

Result was created during the realization of more than one project. More information in the Projects tab.

Continuities

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year

2025

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Diamond and Related Materials

ISSN

0925-9635

e-ISSN

1879-0062

Volume of the periodical

154

Issue of the periodical within the volume

April

Country of publishing house

NL - THE KINGDOM OF THE NETHERLANDS

Number of pages

12

Pages from-to

112127

UT code for WoS article

001434702300001

EID of the result in the Scopus database

2-s2.0-85218451064