Dynamics of local photoconductivity in GaAs and InP investigated by a terahertz scanning near-field optical microscope

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F25%3A00637335" target="_blank" >RIV/68378271:_____/25:00637335 - isvavai.cz</a>
Result on the web
<a href="https://doi.org/10.1103/x8m8-zgmw" target="_blank" >https://doi.org/10.1103/x8m8-zgmw</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1103/x8m8-zgmw" target="_blank" >10.1103/x8m8-zgmw</a>

Result language
angličtina
Original language name
Dynamics of local photoconductivity in GaAs and InP investigated by a terahertz scanning near-field optical microscope
Original language description
Terahertz scanning near-field optical microscope (THz-SNOM) is employed to measure ultrafast evolution of terahertz conductivity spectra after photoexcitation of GaAs and InP wafers using ultrashort laser pulses. Unlike in GaAs, the terahertz photoconductivity decay in InP is controlled mainly by the diffusion of electrons away from the photoexcited area, and by the drift due to band bending at the surface of the semiconductor.We propose and discuss several general strategies of the analysis of signals measured using THz-SNOM, and we estimate the accuracy of the obtained near-field photoconductivity spectra.
Czech name
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Czech description
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Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2025
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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