Fabrication and characterization of Ga2O3-diamond heterostructures: impact of using protective interlayer

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F25%3A00637525" target="_blank" >RIV/68378271:_____/25:00637525 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Fabrication and characterization of Ga2O3-diamond heterostructures: impact of using protective interlayer
Original language description
The development of cost-effective, large-scale deep-ultraviolet solar-blind photodetectors (PD) currently represents a significant challenge in the field of electronic devices. Ultra-wide bandgap materials such as diamond and gallium oxide offer promising potential for the realization of this type of PDs. However, the fabrication of Ga2O3-diamond heterostructures represent a technological challenge. This work focuses on the preparation of polycrystalline diamond on epitaxially/highly-ordered Ga2O3 films as one of the possible approaches. Due to the aggressive environment during the diamond CVD growth, the influence of various protective interlayers (SiO2, SiC, Al2O3, AlN) on Ga2O3 will be presented in detail. Additionally, the chemical nature, structural and morphological properties of the prepared heterostructures will also be highlighted.
Czech name
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Czech description
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Project
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Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2025
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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