Surface-tension-induced phase transitions in freestanding ferroelectric thin films
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F25%3A00639091" target="_blank" >RIV/68378271:_____/25:00639091 - isvavai.cz</a>
Result on the web
<a href="https://hdl.handle.net/11104/0369630" target="_blank" >https://hdl.handle.net/11104/0369630</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1021/acs.nanolett.5c03216" target="_blank" >10.1021/acs.nanolett.5c03216</a>
Alternative languages
Result language
angličtina
Original language name
Surface-tension-induced phase transitions in freestanding ferroelectric thin films
Original language description
The control of ferroelectric topological phases in ultrathin films is central to the development of next-generation nanoelectronic devices. While epitaxial strain is widely used to tune polarization states, its applicability is inherently limited to substrate-bound systems. Here, we show that surface tension becomes a key mechanical factor in freestanding ferroelectric films, governing phase stability and the emergence of topological polarization textures. Using a thermodynamic free energy framework, we show that surface tension induces effective compressive stress in freestanding films, strongly influencing both uniform and topological polarization states. Surface tension also drives large-scale morphological instabilities, reshaping phase behavior in the ferroelectric regime. Our results reveal surface tension as a robust, substrate-independent mechanism for engineering polarization states in freestanding films, creating new opportunities for flexible, strain-free ferroelectric devices.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)
Result continuities
Project
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Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2025
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Nano Letters
ISSN
1530-6984
e-ISSN
1530-6992
Volume of the periodical
25
Issue of the periodical within the volume
34
Country of publishing house
US - UNITED STATES
Number of pages
8
Pages from-to
12987-12994
UT code for WoS article
001550191000001
EID of the result in the Scopus database
2-s2.0-105014229448