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Evolution of giant exchange bias with ferromagnetic ordering and a robust memory effect by strain engineering MoS2 in weak antiferromagnetic gating

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F25%3A00642151" target="_blank" >RIV/68378271:_____/25:00642151 - isvavai.cz</a>

  • Result on the web

    <a href="https://hdl.handle.net/11104/0372076" target="_blank" >https://hdl.handle.net/11104/0372076</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1039/D5MA00565E" target="_blank" >10.1039/D5MA00565E</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    Evolution of giant exchange bias with ferromagnetic ordering and a robust memory effect by strain engineering MoS2 in weak antiferromagnetic gating

  • Original language description

    The emergence of 2D ferromagnetism in MoS2 layers induced by an inherently non-magnetic material like NiOOH is an interesting area of research. This result is of widespread technological importance if additionally associated with magnetic exchange correlations that show promising memory effects. In this work, we show that a giant exchange bias is housed within highly strained 2D MoS2 multilayers by interfacing with the thin weakly antiferromagnetic β-NiOOH phase. The robustness and magnitude of such zero-field-cooled exchange bias emerge from the unique sublattice spin configuration of β-NiOOH, which serves as a source of surface uncompensated moments, while highly strained 2D MoS2 acts as an active pinning layer in the hybrid. The exchange coupling between the weak antiferromagnetic layer and the adjacent moment-induced ferromagnetic layer is strong enough to show a near-room temperature thermoremanent (TRM) memory effect in magnetization states, which is newly observed for 2D hybrid materials. Upon manifesting the vertical type junction, this hybrid material also shows non-volatile electrical bistable states with a low operating bias voltage (1.25 V) and high ON/OFF ratio (6 × 102), along with hysteretic magnetoresistance, which can be useful in 2D-based spintronic applications. First-principles calculations also verified such charge transfer interactions at the interface of the hybrid structure.n

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database

  • CEP classification

  • OECD FORD branch

    10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Result continuities

  • Project

    <a href="/en/project/EH22_008%2F0004596" target="_blank" >EH22_008/0004596: Sensors and Detectors for Future Information Society</a><br>

  • Continuities

    I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Others

  • Publication year

    2025

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    Materials Advances

  • ISSN

    2633-5409

  • e-ISSN

    2633-5409

  • Volume of the periodical

    6

  • Issue of the periodical within the volume

    23

  • Country of publishing house

    GB - UNITED KINGDOM

  • Number of pages

    18

  • Pages from-to

    9150-9167

  • UT code for WoS article

    001603042800001

  • EID of the result in the Scopus database

    2-s2.0-105022604783