Evolution of giant exchange bias with ferromagnetic ordering and a robust memory effect by strain engineering MoS2 in weak antiferromagnetic gating
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F25%3A00642151" target="_blank" >RIV/68378271:_____/25:00642151 - isvavai.cz</a>
Result on the web
<a href="https://hdl.handle.net/11104/0372076" target="_blank" >https://hdl.handle.net/11104/0372076</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1039/D5MA00565E" target="_blank" >10.1039/D5MA00565E</a>
Alternative languages
Result language
angličtina
Original language name
Evolution of giant exchange bias with ferromagnetic ordering and a robust memory effect by strain engineering MoS2 in weak antiferromagnetic gating
Original language description
The emergence of 2D ferromagnetism in MoS2 layers induced by an inherently non-magnetic material like NiOOH is an interesting area of research. This result is of widespread technological importance if additionally associated with magnetic exchange correlations that show promising memory effects. In this work, we show that a giant exchange bias is housed within highly strained 2D MoS2 multilayers by interfacing with the thin weakly antiferromagnetic β-NiOOH phase. The robustness and magnitude of such zero-field-cooled exchange bias emerge from the unique sublattice spin configuration of β-NiOOH, which serves as a source of surface uncompensated moments, while highly strained 2D MoS2 acts as an active pinning layer in the hybrid. The exchange coupling between the weak antiferromagnetic layer and the adjacent moment-induced ferromagnetic layer is strong enough to show a near-room temperature thermoremanent (TRM) memory effect in magnetization states, which is newly observed for 2D hybrid materials. Upon manifesting the vertical type junction, this hybrid material also shows non-volatile electrical bistable states with a low operating bias voltage (1.25 V) and high ON/OFF ratio (6 × 102), along with hysteretic magnetoresistance, which can be useful in 2D-based spintronic applications. First-principles calculations also verified such charge transfer interactions at the interface of the hybrid structure.n
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)
Result continuities
Project
<a href="/en/project/EH22_008%2F0004596" target="_blank" >EH22_008/0004596: Sensors and Detectors for Future Information Society</a><br>
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2025
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Materials Advances
ISSN
2633-5409
e-ISSN
2633-5409
Volume of the periodical
6
Issue of the periodical within the volume
23
Country of publishing house
GB - UNITED KINGDOM
Number of pages
18
Pages from-to
9150-9167
UT code for WoS article
001603042800001
EID of the result in the Scopus database
2-s2.0-105022604783