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Lifting spin degeneracy in rhombohedral trilayer graphene for high magnetoresistance applications

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F25%3A00642491" target="_blank" >RIV/68378271:_____/25:00642491 - isvavai.cz</a>

  • Result on the web

    <a href="https://doi.org/10.1021/acs.jpclett.5c02712" target="_blank" >https://doi.org/10.1021/acs.jpclett.5c02712</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1021/acs.jpclett.5c02712" target="_blank" >10.1021/acs.jpclett.5c02712</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    Lifting spin degeneracy in rhombohedral trilayer graphene for high magnetoresistance applications

  • Original language description

    Many exotic properties in rhombohedral (or ABCstacked) multilayer graphene have recently been reported experimentally. In this Letter, we first reveal the underlying mechanism of spin degeneracy lifting in rhombohedral trilayer graphene. Then, we propose a design concept for all-rhombohedral graphene-based magnetic tunnel junctions (MTJs) by utilizing pristine, back-gated, and top-gated ABCstacked trilayer graphene, which exhibit semimetallic (conducting), semiconducting (insulating), and half-metallic (ferromagnetic) behavior, respectively. This enables the realization of an “all-in-one” magnetic tunnel junction based entirely on trilayer graphene. This design enables voltage-controlled spintronics (lower power than conventional MTJs) with perfect interfacial matching and subnanometer thickness uniformity across 4-in. wafers. Using first-principles calculations and the nonequilibrium Green’s function, we comprehensively study electronic structures and transport properties of these all-graphene MTJs. Furthermore, we demonstrate that their characteristics can be tuned via a perpendicular electric field and electron doping. Our findings offer a new concept for the development of fully graphene-based spintronic devices utilizing the three distinct electronic phases of rhombohedral trilayer graphene.

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database

  • CEP classification

  • OECD FORD branch

    10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Result continuities

  • Project

  • Continuities

    I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Others

  • Publication year

    2025

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    Journal of Physical Chemistry Letters

  • ISSN

    1948-7185

  • e-ISSN

  • Volume of the periodical

    16

  • Issue of the periodical within the volume

    46

  • Country of publishing house

    US - UNITED STATES

  • Number of pages

    6

  • Pages from-to

    11933-11938

  • UT code for WoS article

    001610026900001

  • EID of the result in the Scopus database

    2-s2.0-105022408864