Plasma-Deposited Si-O-C Films

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21220%2F06%3A00125961" target="_blank" >RIV/68407700:21220/06:00125961 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Plasma-Deposited Si-O-C Films

Original language description

SiO2 and Si-O-C films were deposited by plasma-assisted chemical vapor deposition (PACVD) to examine the effects of various technology paramenters on film growth and to establish the composition and the wetting properties of the films, i.a. with a view to using them as an intermediate layer under DLC films deposited on bioimplants, and also to enhancing the water repellence & self-cleaning capacity of stainless steel. The films deposited by PACVD from hexamethyl disilaxane precursor contained up to 51 at.% C and rendered the surfaces of Si, Al, and stainless steel substrates more hydrophobic.

Czech name

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Czech description

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Type

D - Article in proceedings

CEP classification

JK - Corrosion and material surfaces

OECD FORD branch

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Project

<a href="/en/project/LC06041" target="_blank" >LC06041: Preparation, modification and characterization of materials by energetic radiation.</a><br>

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year

2006

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection

Proceedings of the 16th Joint Seminar

ISBN

80-901748-7-6

ISSN

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e-ISSN

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Number of pages

2

Pages from-to

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Publisher name

Czechoslovak Association for Crystal Growth

Place of publication

Prague

Event location

Valtice

Event date

Sep 12, 2006

Type of event by nationality

EUR - Evropská akce

UT code for WoS article

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