Strain fields in graphene

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21220%2F14%3A00222926" target="_blank" >RIV/68407700:21220/14:00222926 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Strain fields in graphene
Original language description
Graphene is a two-dimensional carbon material, which has attracted the attention due to its unique properties such as high charge carrier mobility, transparency and high mechanical strength. In terms of the electronic structure, graphene is a zero band gap semiconductor (or semimetal). However, for the application for electronic devices it is necessary to control the band gap. One of the methods proposed for the opening of the band gap is the application of strain. For this reason our study is going tofocus on the response of graphene in the presence of uniaxial strain. For the analysis of the data, we use mainly Raman spectroscopy, which is known to be a versatile tool to characterize carbon nanostructures.
Czech name
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Czech description
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Publication year
2014
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection
Nanomateriály a nanotechnologie ve stavebnictví 2014
ISBN
978-80-01-05512-0
ISSN
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e-ISSN
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Number of pages
7
Pages from-to
35-41
Publisher name
České vysoké učení technické v Praze
Place of publication
Praha
Event location
Praha
Event date
Jun 12, 2014
Type of event by nationality
CST - Celostátní akce
UT code for WoS article
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