Contact-less Measurement Method of Minor Carrier Lifetime in Si Monocrystal

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21220%2F25%3A00384772" target="_blank" >RIV/68407700:21220/25:00384772 - isvavai.cz</a>
Alternative codes found
RIV/68407700:21230/25:00384772
Result on the web
<a href="https://technology.fel.cvut.cz/en/isps/" target="_blank" >https://technology.fel.cvut.cz/en/isps/</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1109/ISPS65707.2025.11189963" target="_blank" >10.1109/ISPS65707.2025.11189963</a>

Result language
angličtina
Original language name
Contact-less Measurement Method of Minor Carrier Lifetime in Si Monocrystal
Original language description
Several methods for estimating carrier lifetime in silicon bulk or monocrystalline silicon have been known for more than seventy years. However, most of these methods rely on direct galvanic contact with the measured samples. This requirement assumes perfect sample preparation and can sometimes negatively affect the measurement itself. Surface properties and their treatment are crucial for accurate and reproducible results. This article proposes a new method in which direct contact between the measuring circuit and the sample is avoided.
Czech name
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Czech description
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Project
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Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2025
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection
ISPS'25 PROCEEDINGS
ISBN
979-8-3315-5732-4
ISSN
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e-ISSN
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Number of pages
8
Pages from-to
180-187
Publisher name
Czech Technical University in Prague, Faculty of Electrical Engineering
Place of publication
Prague
Event location
Praha
Event date
Aug 27, 2025
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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