Transient Effects on High Voltage Diode Stack under Reverse Bias
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F02%3A03084382" target="_blank" >RIV/68407700:21230/02:03084382 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Transient Effects on High Voltage Diode Stack under Reverse Bias
Original language description
The existence of the non-destructive breakdown was observed at some measurements of reverse current-voltage characteristics of individual diodes. However, the study of this phenomenon is very dificult for many in series connected diodes in stack.
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Result continuities
Project
<a href="/en/project/GA102%2F01%2F1353" target="_blank" >GA102/01/1353: Electromagnetic compatibility of the power switch mode power sources</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2002
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
Proceedings of the 6th International Seminar on Power Semiconductors
ISBN
80-01-02595-0
ISSN
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e-ISSN
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Number of pages
7
Pages from-to
181-187
Publisher name
Vydavatelství ČVUT
Place of publication
Praha
Event location
Praha
Event date
Jun 4, 2002
Type of event by nationality
EUR - Evropská akce
UT code for WoS article
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