Flipping Field and Stability in Anisotropic Magnetoresistive Sensors

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F03%3A03094822" target="_blank" >RIV/68407700:21230/03:03094822 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Flipping Field and Stability in Anisotropic Magnetoresistive Sensors

Original language description

Switched-capacitor flipping circuits developed for Philips KMZ51 and KMZ52 anisotropic magnetoresistance (AMR) sensors give up to 2.8 A/1 kHz current peaks. Such unusually high current deeply saturates the sensor and thus removes hysteresis, reduces noise, and increases the resistance against field shocks. These necessary strong flipping fields are predicted by the energetic model (EM), applied to the magnetization reversal in thin films. The EM parameters have been correlated to microscopic variables,revealing the field dependence of the speed of magnetization reversal. This is responsible for the value of the critical switching field (and therefore for the stability of the AMR sensor) in the easy axis directions, depending on the saturating field amplitude.

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

JB - Sensors, detecting elements, measurement and regulation

OECD FORD branch

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Project

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Continuities

Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year

2003

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Sensors and Actuators

ISSN

0924-4247

e-ISSN

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Volume of the periodical

106

Issue of the periodical within the volume

1-3

Country of publishing house

GB - UNITED KINGDOM

Number of pages

5

Pages from-to

121-125

UT code for WoS article

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EID of the result in the Scopus database

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