Controlled gettering of implanted platinum in silicon produced by helium co-implantation
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F04%3A03096089" target="_blank" >RIV/68407700:21230/04:03096089 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Controlled gettering of implanted platinum in silicon produced by helium co-implantation
Original language description
The paper deals with controlled gettering of implanted platinum in silicon produced by helium co-implantation
Czech name
Řízená getrace implantované platiny využívající koimplantace helia
Czech description
Článek se zabývá řízenou getrací implantované platiny využívající koimplantace helia
Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Result continuities
Project
<a href="/en/project/GA102%2F03%2F0456" target="_blank" >GA102/03/0456: Novel methods of local lifetime control in semiconductors</a><br>
Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2004
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Solid State Phenomena
ISSN
1012-0394
e-ISSN
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Volume of the periodical
95
Issue of the periodical within the volume
96
Country of publishing house
CH - SWITZERLAND
Number of pages
6
Pages from-to
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UT code for WoS article
000189347700079
EID of the result in the Scopus database
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