Fast Soft Recovery Thyristors Fabricated Using Iridium Diffusion

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F04%3A03099484" target="_blank" >RIV/68407700:21230/04:03099484 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Fast Soft Recovery Thyristors Fabricated Using Iridium Diffusion

Original language description

The paper presents experimental results on fabrication of fast soft reverse recovery thyristors with axial carrier lifetime gradient in the wide base, realised using combination of iridium diffusion with low dose of electron irradiation.

Czech name

Není k dispozici

Czech description

Není k dispozici

Type

D - Article in proceedings

CEP classification

JA - Electronics and optoelectronics

OECD FORD branch

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Project

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Continuities

Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year

2004

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection

7th International Seminar on Power Semiconductor

ISBN

80-01-03046-6

ISSN

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e-ISSN

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Number of pages

3

Pages from-to

197-199

Publisher name

Ediční středisko ČVUT

Place of publication

Praha

Event location

Praha

Event date

Aug 31, 2004

Type of event by nationality

EUR - Evropská akce

UT code for WoS article

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