Proton Irradiation Matrix Experiment for Electrical Parameter Optimization of PT-IGBT Power Transistors
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F04%3A03106079" target="_blank" >RIV/68407700:21230/04:03106079 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Proton Irradiation Matrix Experiment for Electrical Parameter Optimization of PT-IGBT Power Transistors
Original language description
600V PT IGBT was subjected to proton irradiation in order to optimize dynamic parameters.
Czech name
Není k dispozici
Czech description
Není k dispozici
Classification
Type
D - Article in proceedings
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Result continuities
Project
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Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2004
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
Proceedings Radiation Effects on Components and Systems
ISBN
84-930056-1-4
ISSN
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e-ISSN
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Number of pages
4
Pages from-to
275-278
Publisher name
RADECS
Place of publication
Madrid
Event location
Madrid
Event date
Sep 22, 2004
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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