Optimization of GaAs MEMS Structures for Microwave Power Sensor

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F05%3A03116580" target="_blank" >RIV/68407700:21230/05:03116580 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Optimization of GaAs MEMS Structures for Microwave Power Sensor

Original language description

The paper discusses an improved technique of the absorbed power measurement which is based on thermal conversion principle where absorbed radio frequency (RF) power is transformed into thermal power inside of a thermally isolated Micromechanical ThermalConverter.

Czech name

Optimalizace GaAs MEMS struktury pro mikrovlnný senzor výkonu

Czech description

The paper discusses an improved technique of the absorbed power measurement which is based on thermal conversion principle where absorbed radio frequency (RF) power is transformed into thermal power inside of a thermally isolated Micromechanical ThermalConverter

Type

D - Article in proceedings

CEP classification

JA - Electronics and optoelectronics

OECD FORD branch

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Project

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Continuities

Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year

2005

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection

Technical Proceedings Vol.1-3, WCM (CDROM) - Nanotech 2005

ISBN

0-9767985-4-9

ISSN

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e-ISSN

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Number of pages

4

Pages from-to

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Publisher name

Nano Science and Technology Institute

Place of publication

Boston

Event location

Anaheim

Event date

May 8, 2005

Type of event by nationality

WRD - Celosvětová akce

UT code for WoS article

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