Optimization of GaAs MEMS Structures for Microwave Power Sensor
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F05%3A03116591" target="_blank" >RIV/68407700:21230/05:03116591 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Optimization of GaAs MEMS Structures for Microwave Power Sensor
Original language description
The paper discusses an improved technique of the absorbed power measurement which is based on thermal conversion principle where absorbed radio frequency (RF) power is transformed into thermal power inside of a thermally isolated Micromechanical ThermalConverter.
Czech name
Optimization of GaAs MEMS structures for Microwave Power Sensor
Czech description
The paper discusses an improved technique of the absorbed power measurement which is based on thermal conversion principle where absorbed radio frequency (RF) power is transformed into thermal power inside of a thermally isolated Micromechanical ThermalConverter.
Classification
Type
D - Article in proceedings
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Result continuities
Project
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Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2005
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
Technical Proceedings Vol.1-3, WCM (WWW) - Nanotech 2005
ISBN
0-9767985-5-7
ISSN
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e-ISSN
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Number of pages
4
Pages from-to
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Publisher name
Nano Science and Technology Institute
Place of publication
Boston
Event location
Anaheim
Event date
May 8, 2005
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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