Simulation of the p-type RTD
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F06%3A03121796" target="_blank" >RIV/68407700:21230/06:03121796 - isvavai.cz</a>
Alternative codes found
RIV/68407700:21230/06:03121802
Result on the web
—
DOI - Digital Object Identifier
—
Alternative languages
Result language
angličtina
Original language name
Simulation of the p-type RTD
Original language description
Simulation od p-type resonant tunneling diodes
Czech name
Simulace RTD s dotací typu p
Czech description
Simulace diod s rezonančním tunelováním s dotací typu p
Classification
Type
D - Article in proceedings
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
—
Result continuities
Project
<a href="/en/project/GA102%2F06%2F0381" target="_blank" >GA102/06/0381: Spintronic applications of ferromagnetic semiconductor nanostructures</a><br>
Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2006
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
The Sixth International Conference on Advanced Semiconductor Devices and Microsystems
ISBN
1-4244-0396-0
ISSN
—
e-ISSN
—
Number of pages
4
Pages from-to
125-128
Publisher name
Slovak University of Technology
Place of publication
Bratislava
Event location
Smolenice
Event date
Oct 16, 2006
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
—