Translinear Subthreshold MOS Filter for the Wireless Sensors Applications
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F06%3A03122643" target="_blank" >RIV/68407700:21230/06:03122643 - isvavai.cz</a>
Result on the web
—
DOI - Digital Object Identifier
—
Alternative languages
Result language
angličtina
Original language name
Translinear Subthreshold MOS Filter for the Wireless Sensors Applications
Original language description
The work describes a design of the filter using log-domain CMOS technology. Filter only consists of capacitances and CMOS transistors in the week inversion mode and they are treated in the subthreshold conduction region. Low-pass, band-pass and high-passfilter is considered in the design. The transfer function of the filter is determined by the feedback around its input and output. My design is based on demand to have a universal building block which is able to filter the frequency band from DC to radio frequencies. This building block is represented by the log-domain differentiator. The frequency band and the transfer function of the filter is determined only aid few devices connected to this building block. It is intended to use these current-mode filters in the design of the wireless sensor systems. In these applications the low-pass filters are usually used as an anti-aliasing filter before the signal is sampled. Also the radio frequency part of the circuit uses the filters.
Czech name
Translineární MOS filtr v podprahové oblasti pro senzory a bezdrátové aplikace
Czech description
Práce popisuje návrh filtru, který je tvořen CMOS transistory ve slabé inverzi a vrežimu podprahové vodivosti. V návrhu jsou uvažovány dolní, horní a pásmová propust. Převodní charakteristika filtru je pak určena zpětnou vazbou okolo dvou bezeztrátovýchdiferenciátorů v proudovém módu. V závislosti na volbě velikosti kapacity a předepínacích proudů lze filtr použít v rozmezí frekvencí od stejnosměrných, až po radiefrekvenční oblast.
Classification
Type
D - Article in proceedings
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
—
Result continuities
Project
—
Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2006
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
The Sixth International Conference on Advanced Semiconductor Devices and Microsystems
ISBN
1-4244-0396-0
ISSN
—
e-ISSN
—
Number of pages
4
Pages from-to
173-176
Publisher name
Slovak University of Technology
Place of publication
Bratislava
Event location
Smolenice
Event date
Oct 16, 2006
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
—