Radiation Defects and Thermal Donors Introduced in Silicon by Hydrogen and Helium Implantation and Subsequent Annealing
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F08%3A00164298" target="_blank" >RIV/68407700:21230/08:00164298 - isvavai.cz</a>
Result on the web
—
DOI - Digital Object Identifier
—
Alternative languages
Result language
angličtina
Original language name
Radiation Defects and Thermal Donors Introduced in Silicon by Hydrogen and Helium Implantation and Subsequent Annealing
Original language description
The paper deals with the study of radiation defects and thermal donors introduced in silicon by hydrogen and helium implantation and subsequent annealing. Introduction and thermal stability of introduced deep and shallow levels was investigated by meansof DLTS and CV measurement.
Czech name
—
Czech description
—
Classification
Type
D - Article in proceedings
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
—
Result continuities
Project
<a href="/en/project/LC06041" target="_blank" >LC06041: Preparation, modification and characterization of materials by energetic radiation.</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2008
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
Gettering and Defect Engineering in Semiconductor Technology XII - Proceedings of the 12th International Autumn Meeting EMFCSC
ISBN
978-3-908451-43-3
ISSN
1012-0394
e-ISSN
—
Number of pages
6
Pages from-to
—
Publisher name
Transtech Publications
Place of publication
Zürich
Event location
Erice
Event date
Oct 14, 2007
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
000252201200033