The Controlled Punch Through (CPT) IGBT The Next Step in Buffer Optimization for Thin Wafer Technology

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F08%3A03145392" target="_blank" >RIV/68407700:21230/08:03145392 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
The Controlled Punch Through (CPT) IGBT The Next Step in Buffer Optimization for Thin Wafer Technology
Original language description
The Controlled Punch Through (CPT) IGBT is described as a next step in the optimization of anode buffer for Thin Wafer Technology of 1200V platform
Czech name
IGBT s bufferem s rizenym prunikem elektrickeho pole - dalsi krok v optimalizacifor technologii tenkych desek
Czech description
Novy koncept CPT IGBT je zaveden a prostudovan pomoci simulace a mereni.

Project
<a href="/en/project/LC06041" target="_blank" >LC06041: Preparation, modification and characterization of materials by energetic radiation.</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2008
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Result description