All

What are you looking for?

All
Projects
Results
Organizations

Quick search

  • Projects supported by TA ČR
  • Excellent projects
  • Projects with the highest public support
  • Current projects

Smart search

  • That is how I find a specific +word
  • That is how I leave the -word out of the results
  • “That is how I can find the whole phrase”

Investigation Properties of GaN Layers Doped with Er3+ and Er3++Yb3+ Ions Using the Transmittance Measurement

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F08%3A03148580" target="_blank" >RIV/68407700:21230/08:03148580 - isvavai.cz</a>

  • Result on the web

  • DOI - Digital Object Identifier

Alternative languages

  • Result language

    angličtina

  • Original language name

    Investigation Properties of GaN Layers Doped with Er3+ and Er3++Yb3+ Ions Using the Transmittance Measurement

  • Original language description

    The paper report about fabrication and properties of Gallium Nitride (GaN) layers doped with erbium or mixture of erbium and ytterbium ions. Transmission spectra in the spectral range from 280 to 800 nm taken by the spectrometer Varian Cary 50 showed that the increasing concentration of the dopants shifts the absorption edge to the lower wavelengths. Optical band gap Eg was determined from the absorption coefficient values using Tauc's procedure and the obtained values varied from 3.08 eV to 3.89 eV depending on the erbium or erbium plus ytterbium doping. Photoluminescence emission at 1530 nm due to the Er3+ intra-4f 4I13/2 -> 4I15/2 transition was observed by using excitation of semiconductor lasers operating at 980 nm.

  • Czech name

    Studium vlastností vrstev GaN s dotací Er3+ a Er3+ + Yb3+ iontů pomocí měření transmisních spekter

  • Czech description

    Článek popisuje vlastnosti vrstev GaN s dotací Er3+ a Er3+ + Yb3+ iontů vyrobených pomocí magnetonového naprašování.

Classification

  • Type

    D - Article in proceedings

  • CEP classification

    JA - Electronics and optoelectronics

  • OECD FORD branch

Result continuities

  • Project

    <a href="/en/project/GA102%2F06%2F0424" target="_blank" >GA102/06/0424: New components of the integrated optics made by the planar hybrid technology</a><br>

  • Continuities

    Z - Vyzkumny zamer (s odkazem do CEZ)

Others

  • Publication year

    2008

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Article name in the collection

    Proceedings of SPIE Photonics, Devices, and Systems IV - Volume 7138

  • ISBN

  • ISSN

    0277-786X

  • e-ISSN

  • Number of pages

    6

  • Pages from-to

  • Publisher name

    SPIE

  • Place of publication

    Bellingham

  • Event location

    Praha

  • Event date

    Aug 27, 2008

  • Type of event by nationality

    EUR - Evropská akce

  • UT code for WoS article