Influence of capping layer thickness on electronic states in self assembled MOVPE grown InAs quantum dots in GaAs
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F09%3A00152023" target="_blank" >RIV/68407700:21230/09:00152023 - isvavai.cz</a>
Alternative codes found
RIV/68378271:_____/09:00330532
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Influence of capping layer thickness on electronic states in self assembled MOVPE grown InAs quantum dots in GaAs
Original language description
The paper investigates the influence of capping layer thickness on electronic states in self assembled MOVPE grown InAs quantum dots in GaAs. The structures were investigated by means of atomic force microscopy and photoluminescence spectroscopy.
Czech name
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Czech description
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Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2009
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Superlattices and Microstructures
ISSN
0749-6036
e-ISSN
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Volume of the periodical
46
Issue of the periodical within the volume
1
Country of publishing house
US - UNITED STATES
Number of pages
4
Pages from-to
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UT code for WoS article
000267444900056
EID of the result in the Scopus database
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