Engineering of MOVPE grown InAs/GaAs Quantum Dot Structures
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F09%3A00155777" target="_blank" >RIV/68407700:21230/09:00155777 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Engineering of MOVPE grown InAs/GaAs Quantum Dot Structures
Original language description
The paper deals with engineering of MOVPE grown InAs/GaAs quantum dot structures especially by means of use of the thin InGaAs strain reducing layer.
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
<a href="/en/project/GA202%2F06%2F0718" target="_blank" >GA202/06/0718: Quantum dot engineering</a><br>
Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2009
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
Workshop 09
ISBN
978-80-01-04286-1
ISSN
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e-ISSN
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Number of pages
2
Pages from-to
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Publisher name
ČVUT
Place of publication
Praha
Event location
Praha
Event date
Feb 16, 2009
Type of event by nationality
EUR - Evropská akce
UT code for WoS article
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