Electrical Characterization of Deep-Lying Donor Layers Created by Proton Implantation and Subsequent Annealing in N-Type Float Zone and Czochralski Silicon
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F09%3A00158107" target="_blank" >RIV/68407700:21230/09:00158107 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Electrical Characterization of Deep-Lying Donor Layers Created by Proton Implantation and Subsequent Annealing in N-Type Float Zone and Czochralski Silicon
Original language description
The deep-lying donor layers created by proton implantation and subsequent isochronal annealing were investigated in silicon substrates with different oxygen concentration.
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2009
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
ECS Transactions: Analytical Techniques for Semiconductor Materials and Process Characterization 6 (ALTECH 2009)
ISBN
978-1-56677-740-7
ISSN
1938-5862
e-ISSN
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Number of pages
11
Pages from-to
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Publisher name
The Electrochemical Society
Place of publication
New Jersey
Event location
Vienna
Event date
Oct 4, 2009
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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