Reliable Procedure for Electrical Characterization of MOS-Based Devices
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F09%3A00162849" target="_blank" >RIV/68407700:21230/09:00162849 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Reliable Procedure for Electrical Characterization of MOS-Based Devices
Original language description
Reliable procedure for electrical characterization of MOS-based devices. In the paper, we outline several modifications of a classical procedure.
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Result continuities
Project
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Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2009
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
Proceedings of 2009 International Semiconductor Device Research Symposium
ISBN
978-1-4244-6031-1
ISSN
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e-ISSN
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Number of pages
2
Pages from-to
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Publisher name
IEEE
Place of publication
Piscataway
Event location
College Park, Maryland
Event date
Dec 9, 2009
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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