InGaAs and GaAsSb strain reducing layers covering InAs/GaAs quantum dots
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F10%3A00167386" target="_blank" >RIV/68407700:21230/10:00167386 - isvavai.cz</a>
Alternative codes found
RIV/68378271:_____/10:00342440 RIV/00216224:14310/10:00048777
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
InGaAs and GaAsSb strain reducing layers covering InAs/GaAs quantum dots
Original language description
The paper investigates the influence of InGaAs and GaAsSb strain reducing layers covering on optical properties of InAs/GaAs quantum dots.
Czech name
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Czech description
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Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2010
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Journal of Crystal Growth
ISSN
0022-0248
e-ISSN
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Volume of the periodical
312
Issue of the periodical within the volume
8
Country of publishing house
NL - THE KINGDOM OF THE NETHERLANDS
Number of pages
5
Pages from-to
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UT code for WoS article
000277039100069
EID of the result in the Scopus database
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