Evaluation of Low-Temperature Molybdenum Diffusion for Lifetime Control
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F10%3A00169675" target="_blank" >RIV/68407700:21230/10:00169675 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Evaluation of Low-Temperature Molybdenum Diffusion for Lifetime Control
Original language description
High-power P-I-N diodes (2.5 kV, 150 A) with sputtered Mo layer at anode were annealed in the range 550 - 800 oC with and without the previous 10 MeV helium implantation. The devices were characterized using DLTS, spreading resistance, OCVD lifetime, leakage current, forward voltage drop and reverse recovery measurements.
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Result continuities
Project
<a href="/en/project/LC06041" target="_blank" >LC06041: Preparation, modification and characterization of materials by energetic radiation.</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2010
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
ISPS'10 PROCEEDINGS
ISBN
978-80-01-04602-9
ISSN
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e-ISSN
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Number of pages
4
Pages from-to
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Publisher name
České vysoké učení technické v Praze
Place of publication
Praha
Event location
Praha
Event date
Sep 1, 2010
Type of event by nationality
EUR - Evropská akce
UT code for WoS article
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