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Evaluation of Low-Temperature Molybdenum Diffusion for Lifetime Control

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F10%3A00169675" target="_blank" >RIV/68407700:21230/10:00169675 - isvavai.cz</a>

  • Result on the web

  • DOI - Digital Object Identifier

Alternative languages

  • Result language

    angličtina

  • Original language name

    Evaluation of Low-Temperature Molybdenum Diffusion for Lifetime Control

  • Original language description

    High-power P-I-N diodes (2.5 kV, 150 A) with sputtered Mo layer at anode were annealed in the range 550 - 800 oC with and without the previous 10 MeV helium implantation. The devices were characterized using DLTS, spreading resistance, OCVD lifetime, leakage current, forward voltage drop and reverse recovery measurements.

  • Czech name

  • Czech description

Classification

  • Type

    D - Article in proceedings

  • CEP classification

    JA - Electronics and optoelectronics

  • OECD FORD branch

Result continuities

  • Project

    <a href="/en/project/LC06041" target="_blank" >LC06041: Preparation, modification and characterization of materials by energetic radiation.</a><br>

  • Continuities

    P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)

Others

  • Publication year

    2010

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Article name in the collection

    ISPS'10 PROCEEDINGS

  • ISBN

    978-80-01-04602-9

  • ISSN

  • e-ISSN

  • Number of pages

    4

  • Pages from-to

  • Publisher name

    České vysoké učení technické v Praze

  • Place of publication

    Praha

  • Event location

    Praha

  • Event date

    Sep 1, 2010

  • Type of event by nationality

    EUR - Evropská akce

  • UT code for WoS article