Sensing Circuit for CMOS One-time-programmable Memory Block

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F10%3A00169914" target="_blank" >RIV/68407700:21230/10:00169914 - isvavai.cz</a>
Result on the web
—
DOI - Digital Object Identifier
—

Result language
angličtina
Original language name
Sensing Circuit for CMOS One-time-programmable Memory Block
Original language description
One-time-programmable (OTP) memory blocks are advantageously employed in recently fabricated ICs of many kinds of usage. This is due to their ability to widen the complexity and robustness of the ICs with no need of additional devices. The programmable cells serve mostly for so called in-package-tuning of submicron CMOS circuits and are used like logical trimmer. They are simply trimmed by burning of poly-Si fuses in each memory cell. The burning process is realized just by current in the order of mA flowing through the selected fuse. For correct operation of the memory cell, an efficient low power, low voltage sensing circuit was developed. Proposed circuit works from under 1V supply voltage, consuming under 20uA. The reading circuit was simulated within the 0.25 um CMOS process utilizing low threshold CMOS devices and the graphical results of the analysis and simulations where used for develepment of educational web tutorial for design system from Mentor Graphics.
Czech name
—
Czech description
—

Publication year
2010
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Similar results(10)