Reliable procedure for electrical characterization of MOS-based devices
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F10%3A00170810" target="_blank" >RIV/68407700:21230/10:00170810 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Reliable procedure for electrical characterization of MOS-based devices
Original language description
Contemporary models of MOSFET are very complicated, especially the BSIM and EKV ones. Therefore, an identification of many parameters of these models is quite a difficult task from both algorithmic and numeric points of view. Moreover, the complexity ofthe models makes an optimization of MOS-based functional blocks too difficult. This paper suggests several improvements of both mono-objective and multi-objective optimization methods to enhance the reliability of extraction of the model parameters and to find the most achievable properties of the MOS-based functional blocks.
Czech name
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Czech description
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Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BA - General mathematics
OECD FORD branch
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Result continuities
Project
<a href="/en/project/GA102%2F08%2F0784" target="_blank" >GA102/08/0784: Special methods of modeling and simulation of switched circuits</a><br>
Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2010
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Solid-State Electronics
ISSN
0038-1101
e-ISSN
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Volume of the periodical
54
Issue of the periodical within the volume
10
Country of publishing house
NL - THE KINGDOM OF THE NETHERLANDS
Number of pages
12
Pages from-to
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UT code for WoS article
000281019100022
EID of the result in the Scopus database
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