Influence of strain reducing layers on electroluminescence and photoluminescence of InAs/GaAs QD structures
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F11%3A00177249" target="_blank" >RIV/68407700:21230/11:00177249 - isvavai.cz</a>
Alternative codes found
RIV/68378271:_____/11:00371379
Result on the web
<a href="http://dx.doi.org/10.1016/j.jcrysgro.2010.09.041" target="_blank" >http://dx.doi.org/10.1016/j.jcrysgro.2010.09.041</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.jcrysgro.2010.09.041" target="_blank" >10.1016/j.jcrysgro.2010.09.041</a>
Alternative languages
Result language
angličtina
Original language name
Influence of strain reducing layers on electroluminescence and photoluminescence of InAs/GaAs QD structures
Original language description
The paper deals with the influence of different strain reducing layers on electroluminescence and photoluminescence of InAs/GaAs QD structures.
Czech name
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Czech description
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Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2011
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Journal of Crystal Growth
ISSN
0022-0248
e-ISSN
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Volume of the periodical
315
Issue of the periodical within the volume
1
Country of publishing house
NL - THE KINGDOM OF THE NETHERLANDS
Number of pages
4
Pages from-to
110-113
UT code for WoS article
000287558400024
EID of the result in the Scopus database
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