Theoretical Model of the Bistable Semiconductor Laser Diode Based on the Rate Equations

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F11%3A00181015" target="_blank" >RIV/68407700:21230/11:00181015 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Theoretical Model of the Bistable Semiconductor Laser Diode Based on the Rate Equations

Original language description

The paper describes theoretical and experimental results that enabled the authors to proof optical bistability behavior of a specially modified bistable semiconductor laser diode (BLD) created on a structure with a saturable absorption section. A mathematical model of the light-current characteristic, condition for bistability and the basic parameters of the hysteresis loop were derived by solving a system of three rate equations. That system was used for simulation of the light-current characteristic and conditions of bistability of the realized BLDs. For selected operating points of the simulated lightcurrent characteristic the parameters of hysteresis loop and element values of the BLD electrical equivalent circuit for small signal variations were calculated. The bistability was experimentally measured by the new time method devised for impulse bistability verification (IBV).

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

JA - Electronics and optoelectronics

OECD FORD branch

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Project

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Continuities

Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year

2011

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Radioengineering

ISSN

1210-2512

e-ISSN

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Volume of the periodical

20

Issue of the periodical within the volume

2

Country of publishing house

CZ - CZECH REPUBLIC

Number of pages

7

Pages from-to

486-492

UT code for WoS article

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EID of the result in the Scopus database

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