Hydrogenated Radiation Defects in Silicon: Isotopic Effect of Hydrogen and Deuterium
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F11%3A00181914" target="_blank" >RIV/68407700:21230/11:00181914 - isvavai.cz</a>
Alternative codes found
RIV/00216224:14310/11:00055016
Result on the web
<a href="http://www.scientific.net/SSP.178-179.398" target="_blank" >http://www.scientific.net/SSP.178-179.398</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.4028/www.scientific.net/SSP.178-179.398" target="_blank" >10.4028/www.scientific.net/SSP.178-179.398</a>
Alternative languages
Result language
angličtina
Original language name
Hydrogenated Radiation Defects in Silicon: Isotopic Effect of Hydrogen and Deuterium
Original language description
The paper deals with the isotopic effect of hydrogen and deuterium on hydrogenated radiation defects in silicon.
Czech name
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Czech description
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Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2011
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Solid State Phenomena
ISSN
1012-0394
e-ISSN
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Volume of the periodical
178-179
Issue of the periodical within the volume
1
Country of publishing house
CH - SWITZERLAND
Number of pages
6
Pages from-to
398-403
UT code for WoS article
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EID of the result in the Scopus database
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