Issues of flicker noise measurements on power semiconductor devices
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F11%3A00182032" target="_blank" >RIV/68407700:21230/11:00182032 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Issues of flicker noise measurements on power semiconductor devices
Original language description
Flicker noise is one of the most important quality indicators of electronic devices. Quality of passive elements is often evaluated according noise level, which is deeply affected by material ageing. Noise measurement can be used for lifetime predictionand probability of failures. Concerning semiconductor devices flicker noise is a criterion of used production technology. Influence of ageing is (contrary of passive devices) not so expressive. However, noise measurement allows to reveal latent defects of diode reverse properties that are unidentified by means of standard in-process inspection. Unlike other standard methods noise measurement requires perfect matching of analyzing circuit and investigated device. Used equipment and method deeply affect results of measurement.
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Result continuities
Project
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Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2011
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
Diagnostika '11
ISBN
978-80-261-0020-1
ISSN
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e-ISSN
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Number of pages
4
Pages from-to
152-155
Publisher name
Západočeská univerzita v Plzni
Place of publication
Plzeň
Event location
Kašperské Hory
Event date
Sep 6, 2011
Type of event by nationality
EUR - Evropská akce
UT code for WoS article
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