Power Semiconductors - State of Art and Future Trends
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F11%3A00183830" target="_blank" >RIV/68407700:21230/11:00183830 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1063/1.3592437" target="_blank" >http://dx.doi.org/10.1063/1.3592437</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1063/1.3592437" target="_blank" >10.1063/1.3592437</a>
Alternative languages
Result language
angličtina
Original language name
Power Semiconductors - State of Art and Future Trends
Original language description
Advances in power semiconductor technology have improved the efficiency, size, weight and cost of power electronic systems. At present, IGCTs, IGBTs, and MOSFETs represent modern switching devices. Power integrated circuits (PIC) have been developed forthe use of power converters for portable, automotive and aerospace applications. For advanced applications, new materials (SiC and GaN) have been introduced. This paper reviews the state of these devices and elaborates on their potentials in terms of higher voltages, higher power density, and better switching performance.
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Result continuities
Project
—
Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2011
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
Proceedings of the fourth global conference on power control and optimization
ISBN
978-0-7354-0893-7
ISSN
0094-243X
e-ISSN
—
Number of pages
9
Pages from-to
16-24
Publisher name
American Institute of Physics
Place of publication
New York
Event location
Kuching,
Event date
Dec 2, 2010
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
000291830300002